Erratum: Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes (Applied Physics Letters (2003) 82 (2410))

Applied Physics Letters

Volumn 84, Issue 23, 2004, Pages 4816-

  Twigg, M E ^a   Stahlbush, R E ^a   Fatemi, M ^a   Arthur, S D ^b   Fedison, J B ^b   Tucker, J E ^b   Wang, S ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b GE GLOBAL RESEARCH   (United States)

^c Owens Corning Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3042682689     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1763232     Document Type: Erratum

References (5)

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3. S. Ha, M. Benamara, M. Skowronski, and H. Lendnmann, Appl. Phys. Lett. 83, 4957 (2004).
4. J. P. Hirth and J. Lothe, Theory of Dislocations (Krieger, Malabar, FL, 1992), pp. 378-379.
5. M. E. Twigg, R. E. Stahlbush, M. Fatemi, S. D. Arthur, J. B. Fedison, J. B. Tucker, and S. Wang, J. Electron. Mater. 33, 472 (2004).