Effect of test temperature and strain rate on the yield stress of monocrystalline 6H-SiC

Physica Status Solidi (A) Applied Research

Volumn 166, Issue 1, 1998, Pages 155-169

  Samant, A V ^a   Zhou, W L ^a   Pirouz, P ^a  

^a Case Western Reserve University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSION TESTING; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; ENTHALPY; HIGH TEMPERATURE EFFECTS; HIGH TEMPERATURE TESTING; PLASTIC DEFORMATION; SHEAR STRESS; STRAIN RATE; STRESS ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; YIELD STRESS;

ACTIVATION ENTHALPY;

SILICON CARBIDE;

EID: 0032027956     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199803)166:1<155::AID-PSSA155>3.0.CO;2-V     Document Type: Article

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