SiC devices for high voltage high power applications

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 963-968

  Sugawara, Y ^a  

^a KANSAI ELECTRIC POWER CO   (Japan)

Author keywords

GTO; IGBT; Inverter; JGBT; Module; Pn diode; RonS; SiC; SICGT; SIJFET

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC INVERTERS; ELECTRIC POTENTIAL; SEMICONDUCTOR DIODES;

JUNCTION GATE BIPOLAR TRANSISTOR (JGBT); MODULES; PN DIODES; RONS; STATIC INDUCTION CARRIER INJECTED JFET);

SILICON CARBIDE;

EID: 8744307224     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.963     Document Type: Conference Paper

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