Driving force of stacking-fault formation in SiC p-i-n diodes

Physical Review Letters

Volumn 92, Issue 17, 2004, Pages

  Ha, S ^a   Skowronski, M ^a   Sumakeris, J J ^b   Paisley, M J ^b   Das, M K ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); ELECTRIC POWER SYSTEMS; FREE ENERGY; METALLIZING; NUCLEATION; OPTICAL MICROSCOPY; SILICON CARBIDE; STACKING FAULTS; STRESS ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

ELECTRON-HOLE RECOMBINATION; OPTICAL EMISSION MICROSCOPY (OEM); PARTIAL DISLOCATIONS; STACKING-FAULT EXPANSION;

SEMICONDUCTOR DIODES;

EID: 2942659859     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.175504     Document Type: Article

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