Hafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects

Materials Science and Engineering: B

Volumn 109, Issue 1-3, 2004, Pages 6-10

  Frank, Martin M ^a,b   Sayan, Safak ^a   Dörmann, Sabine ^a   Emge, Thomas J ^a   Wielunski, Leszek S ^a,c   Garfunkel, Eric ^a   Chabal, Yves J ^a  

^a RUTGERS UNIVERSITY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c Laboratory for Surface Modification   (United States)

Author keywords

Chemical vapor deposition; Infrared spectroscopy; Integrated technology; Metal oxide semiconductor structures; Oxides; Thin films

Indexed keywords

AMORPHOUS MATERIALS; CARBONATES; CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; CRYSTALLIZATION; DEFECTS; HAFNIUM COMPOUNDS; HYDROXYLATION; INFRARED SPECTROSCOPY; PERMITTIVITY; STOICHIOMETRY; X RAY DIFFRACTION ANALYSIS;

CRYSTAL PHASE; ELECTRICAL DEFECTS; INTEGRATED TECHNOLOGY; METAL-OXIDE-SEMICONDUCTOR STRUCTURES;

DIELECTRIC FILMS;

EID: 2342634503     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.10.020     Document Type: Conference Paper

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