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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 1, 2001, Pages 285-289

Plasma-assisted atomic layer growth of high-quality aluminum oxide thin films

(3) Jeong, C W a Lee, J S a Joo, S K a

a Seoul National University (South Korea)

Author keywords

Aluminum oxide; DMEAA; Plasma annealing; Plasma assisted atomic layer deposition

Indexed keywords

ALUMINA; ANNEALING; CURRENT DENSITY; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; THERMAL EFFECTS; THIN FILMS;

PLASMA ANNEALING; PLASMA-ASSISTED ATOMIC LAYER CONTROLLED DEPOSITION (PAALD);

DIELECTRIC FILMS;

EID: 0035062293 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.40.285 Document Type: Article

Times cited : (23)

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