Comparison of hafnium precursors for the MOCVD of HfO2 for gate dielectric applications

Integrated Ferroelectrics

Volumn 57, Issue , 2003, Pages 1163-1173

  Teren, A R ^a   Ehrhart, P ^a   Waser, R ^a   He, J Q ^a   Jia, C L ^a   Schumacher, M ^b   Lindner, J ^b   Baumann, P K ^b   Leedham, T J ^c   Rushworth, S R ^c   Jones, A C ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b AIXTRON AG   (Germany)

^c Epichem Ltd   (United Kingdom)

Author keywords

Gate dielectric; HfO2; High k; MOSFET

Indexed keywords

AMORPHOUS FILMS; DIELECTRIC FILMS; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOSFET DEVICES; PERMITTIVITY; PHASE INTERFACES; PHASE TRANSITIONS;

GATE DIELECTRICS; HAFNIUM OXIDE FILMS; INTERFACE CHARACTERISTICS;

HAFNIUM COMPOUNDS;

EID: 9244252209     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580390259579     Document Type: Article

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