Identifying the most promising high-k gate dielectrics

Semiconductor International

Volumn 24, Issue 8, 2001, Pages 227-228+230+232+234+236

  Wallace, R M ^a   Wilk, G D ^a  

^a UNIVERSITY OF NORTH TEXAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRODES; ENERGY GAP; LEAKAGE CURRENTS; PERMITTIVITY; POLYSILICON; SILICATES; SUBSTRATES; THERMODYNAMIC STABILITY;

BARRIER HEIGHT; HIGH PERMITTIVITY GATE DIELECTRICS; PSEUDO BINARY FILMS;

DIELECTRIC MATERIALS;

EID: 0035391869     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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