Rapid thermal chemical vapor deposition of zirconium oxide for metal-oxide-semiconductor field effect transistor application

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 5, 2001, Pages 1782-1787

  Chang, Jane P ^a   Lin, You Sheng ^a   Chu, Karen ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; DEPOSITION; MOSFET DEVICES; PERMITTIVITY; SEMICONDUCTING FILMS; SILICON WAFERS; SUBSTRATES; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RT-CVD);

ZIRCONIA;

EID: 0035440751     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1396639     Document Type: Article

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