Chemical vapor deposition of HfO2 films on Si(100)

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 2, 2002, Pages 507-512

  Sayan, S ^a   Aravamudhan, S ^a,b   Busch, B W ^a,b   Schulte, W H ^a   Cosandey, F ^a   Wilk, G D ^b   Gustafsson, T ^a   Garfunkel, E ^a  

^a RUTGERS UNIVERSITY   (United States)

^b AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CAPACITANCE; CAPACITORS; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRON MICROSCOPY; ELLIPSOMETRY; FILM GROWTH; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SUBSTRATES;

GATE DIELECTRICS; ULTRATHIN OXIDES;

ULTRATHIN FILMS;

EID: 0036494032     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1450584     Document Type: Article

References (24)