Control over strain relaxation in Si-based heterostructures

Solid-State Electronics

Volumn 48, Issue 8, 2004, Pages 1265-1278

  Izyumskaya, Natalia F ^a,b   Avrutin, Vitaly S ^a,b   Vyatkin, Anatoly F ^a  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

Buffer layers; Compliant substrates; Devices; Lattice mismatched systems; Silicon; Virtual substrates

Indexed keywords

BAND STRUCTURE; CRYSTAL LATTICES; DEGREES OF FREEDOM (MECHANICS); DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GROWTH KINETICS; IRRADIATION; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; OPTOELECTRONIC DEVICES; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; SOLID STATE DEVICES; STRAIN;

BUFFER LAYERS; COMPLAINT SUBSTRATES; LATTICE-MISMATCHED SYSTEMS; VIRTUAL SUBSTRATES;

HETEROJUNCTIONS;

EID: 2342589448     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.01.010     Document Type: Article

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