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Volumn 14, Issue 3, 1996, Pages 2170-2174

Strain-modulated epitaxy: Modification of growth kinetics via patterned, compliant substrates

Author keywords

[No Author keywords available]

Indexed keywords


EID: 5544273827     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588892     Document Type: Article
Times cited : (10)

References (17)
  • 15
    • 5544233480 scopus 로고
    • Physical Concepts of Materials for Novel Optoelectronic Device Applications I
    • G. L. Price and B. F. Usher, Physical Concepts of Materials for Novel Optoelectronic Device Applications I [Proc. SPIE 1361 (1990)]
    • (1990) Proc. SPIE 1361
    • Price, G.L.1    Usher, B.F.2
  • 16
    • 85088542913 scopus 로고    scopus 로고
    • note
    • 0.96As/GsAs quantum well with a thickness of 80 ML was grown on top of the 2000 A layer. This structure was very thin and did not affect the experiment.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.