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Applied Physics Letters

Volumn 73, Issue 6, 1998, Pages 838-840

Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

(5) Glasko, J M a Elliman, R G a Zou, J b Cockayne, D J H b Fitz Gerald, J D a

a AUSTRALIAN NATIONAL UNIVERSITY (Australia)

b UNIVERSITY OF SYDNEY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004691555 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.122018 Document Type: Article

Times cited : (10)

References (15)

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