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Applied Physics Letters

Volumn 72, Issue 24, 1998, Pages 3160-3162

Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers

(12) Peng, C S a Zhao, Z Y a Chen, H a Li, J H a Li, Y K a Guo, L W a Dai, D Y a Huang, Q a Zhou, J M a Zhang, Y H b Sheng, T T c Tung, C H c

a INSTITUTE OF PHYSICS (China)

b INSTITUTE OF SEMICONDUCTORS (China)

c INSTITUTE OF MICROELECTRONICS (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342273683 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.121579 Document Type: Article

Times cited : (67)

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