Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 200-205

  Hollander B ^a   Mantl, S ^a   Liedtke, R ^a   Mesters, S ^a   Herzog, H J ^b   Kibbel, H ^b   Hackbarth, T ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b DAIMLER AG   (Germany)

Author keywords

Bubbles; Cavities; Molecular beam epitaxy; SiGe; Strain relaxation

Indexed keywords

ANNEALING; BUBBLES (IN FLUIDS); DISLOCATIONS (CRYSTALS); HYDROGEN; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; STRAIN; STRESS RELAXATION; THERMAL EFFECTS;

SILICON GERMANIDE; STRAIN RELAXATION;

SEMICONDUCTING FILMS;

EID: 0033513731     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00690-9     Document Type: Article

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