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Volumn 389, Issue 1-2, 2001, Pages 146-152
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Thin SiGe buffer layer growth by in situ low energy hydrogen plasma preparation
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DAIMLER AG
(Germany)
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Author keywords
Hydrogen plasma; Molecular beam epitaxy (MBE); Relaxed SiGe buffer layers; X Ray diffraction
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
COMPOSITION EFFECTS;
CRYSTAL ORIENTATION;
DISLOCATIONS (CRYSTALS);
MOLECULAR BEAM EPITAXY;
RELAXATION PROCESSES;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
LOW ENERGY PLASMA CLEANING (LEPC);
SEMICONDUCTING FILMS;
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EID: 0035876552
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(01)00869-0 Document Type: Article |
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Times cited : (16)
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References (20)
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