Twist-type silicon bicrystals and compliant substrates prepared from silicon-on-insulator wafers

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 80, Issue 4, 2000, Pages 881-891

  Chen, Chih ^a   Tu, K N ^a   Tung, C H ^b   Sheng, T T ^b   Ploessl, A ^c   Scholz, R ^c   Gosele U ^c  

^a University of California   (United States)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GRAIN BOUNDARIES; MOIRE FRINGES; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

COMPLIANT SUBSTRATES; DISLOCATION NETWORK; SILICON BICRYSTALS; SILICON GERMANIUM; SILICON SUBSTRATES;

SILICON WAFERS;

EID: 0034175313     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418610008212088     Document Type: Article

References (20)

1. Ahn, K. Y., Stengl, R., Tan, T. Y., and Gosele, U., 1992, J. Appi. Phys., 72, 561.
2. Balluffi, R. W., Komen, Y., and Schober, T., 1972, Surf. Sci., 31, 68.
3. Benamara, M., Rocher, A., Laporte, A., Sarrabayrouse, G., Lescouzeres, L., Peyre-Lavigne, A., Fnaiech, M., and Claverie, A., 1995, Mat. Res. Symp. Proc., 378, 863.
4. Bengtossen, S., and Engstrom, O. J., 1989, J. Appi. Phys., 66, 1231.
5. Carter, C. B., Fôll, H., Ast, D.G., and Sass, S. L., 1981, Phil. Mag. A, 43, 441.
6. Chabal, Y. J., Feijóo, D., Christman, S. B., and Googwin, C. A., 1995, Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications (Pennington, New Jersey: Electrochemical Society), p. 305.
7. Chaudhari, P., and Charpnau, H., 1972, Surf. Sci., 31, 104.
8. Chaudhari, P., and Matthews, J. W., 1970, Appi. Phys. Lett., 17, 115.
9. Edington, J. W., 1976, Practical Electron Microscopy in Materials Science (Eindhoven: N. V. Philips), p. 190.
10. Ejeckam, F. E., Lo, Y. H., Subramanian, S., Hou, H. Q., and Hammons, B. E., 1997, Appi. Phys. Lett., 70, 1685.
11. Föll, H., and Ast, D. G., 1979, Phil. Mag. A, 40, 589.
12. Gao, Y., Dregia, S. A., and Shewmon, P.G., 1989, Acta Melali., 37, 1627.
13. Keblinski, P., Phillpot, S. R., and Wolf, D., 1996, Phys. Rev. Lett., 77, 2965.
14. Kopperschmidt, P., Senz, St., Scholz, R., and Gôsele, U., 1999, Appi. Phys. Lett., 74, 374.
15. Lo, Y. H., 1991, Appi. Phys. Lett., 59, 2311.
16. Perreault, G. C., Hyland, S. L., and Ast, D. G., 1991, Phil. Mag. A, 64, 587.
17. Read, W. T., 1953, Dislocations in Crystals (New York: McGraw-Hill).
18. Schober, T., and Balluffi, R. W., 1971, Phil. Mag., 24, 165.
19. Tong, Q. Y., and Gôsele, U., 1999, Semiconductor Wafer Bonding: Science and Technology (New York: Wiley).
20. Zhu, Z.-H., Ejeckam, F. E., Qian, Y., Zhang, J., Zhang, Z., Christenson, G. L., and Lo, Y. H., 1997, IEEE J Selected Top. quantum Electron., 3, 927.