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Volumn 30, Issue 7, 2001, Pages 825-828

High quality AlN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy

(11) Kipshidze, G a Nikishin, S a Kuryatkov, V a Choi, K a Gherasoiu, I a Prokofyeva, T b Holtz, M b Temkin, H a Hobart, K D c Kub, F J c Fatemi, M c

a Texas Tech University (United States)

b TEXAS TECH UNIVERSITY (United States)

c NAVAL RESEARCH LABORATORY (United States)

Author keywords

AlN; Composite; GaN; Si SiC; Substrate

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL BONDS; CRACKING (CHEMICAL); MOLECULAR BEAM EPITAXY; PLASTIC DEFORMATION; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; STRESS RELAXATION; X RAY DIFFRACTION ANALYSIS;

CATHODOLUMINESCENCE MEASUREMENTS; GAS SOURCE MOLECULAR BEAM EPITAXY; WURTZITE STRUCTURE;

SEMICONDUCTING SILICON;

EID: 6644224091 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0065-4 Document Type: Article

Times cited : (9)

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