High-mobility two-dimensional electron gases in Si/SiGe heterostructures on relaxed SiGe layers grown at high temperature

Semiconductor Science and Technology

Volumn 12, Issue 8, 1997, Pages 943-946

  Churchill, A C ^a   Robbins, D J ^a   Wallis, D J ^a   Griffin, N ^b   Paul, D J ^b   Pidduck, A J ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; HIGH TEMPERATURE OPERATIONS; MORPHOLOGY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILANES; SILICON WAFERS; STRAIN; STRESS RELAXATION; SUBSTRATES; VACUUM DEPOSITED COATINGS;

ELECTRON GASES;

HETEROJUNCTIONS;

EID: 0031207671     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/8/002     Document Type: Article

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