Ultrahigh room-temperature hole Hall and effective mobility in Si 0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures

Applied Physics Letters

Volumn 81, Issue 5, 2002, Pages 847-849

  Irisawa, T ^a   Tokumitsu, S ^b   Hattori, T ^b   Nakagawa, K ^c   Koh, S ^a   Shiraki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

^c UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE CHARACTERISTICS; DRIFT MOBILITIES; EFFECTIVE MOBILITIES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MODULATION-DOPED STRUCTURES; P-TYPE; PARALLEL CONDUCTION; ROOM TEMPERATURE; SB DOPING; STRAINED-GE;

CRYSTALS; HALL MOBILITY; HETEROJUNCTIONS; HOLE MOBILITY; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON;

GERMANIUM;

EID: 79956010496     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1497725     Document Type: Article

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