Chemical vapor deposition of silicon-germanium heterostructures

Journal of Crystal Growth

Volumn 216, Issue 1, 2000, Pages 171-184

  Bozzo, S ^a   Lazzari, J L ^a   Coudreau, C ^a   Ronda, A ^a   Arnaud D'Avitaya, F ^a   Derrien, J ^a   Mesters, S ^b   Hollaender, B ^b   Gergaud, P ^c   Thomas, O ^c  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c MATOP   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); MORPHOLOGY; PARTIAL PRESSURE; PRESSURE EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SURFACE ROUGHNESS; THERMAL EFFECTS;

SILICON GERMANIDE;

HETEROJUNCTIONS;

EID: 0033689423     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00429-2     Document Type: Article

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