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Volumn 74, Issue 12, 1999, Pages 1689-1691

The critical thickness of an epilayer deposited on a semiconductor-on-insulator compliant substrate

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; ELECTRIC INSULATORS; FILM GROWTH; FOURIER TRANSFORMS; SUBSTRATES;

EID: 0032614368     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123656     Document Type: Article
Times cited : (27)

References (19)
  • 18
    • 85034146944 scopus 로고    scopus 로고
    • note
    • e by μ in Eqs. (A3) and (A6), and both J and J* by μ[4(1 - v)] in Eqs. (AS) and (A7). The third part of the stress fields is derived in a similar way as was the second part.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.