Defect-free strain relaxation in locally MBE-grown SiGe heterostructures

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 27-32

  Rupp, T ^a   Kaesen, F ^a   Hansch, W ^a   Hammerl, E ^b   Gravesteijn, D J ^c   Schorer, R ^d   Silveira, E ^d   Abstreiter, G ^d   Eisele, I ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b SIEMENS AG   (Germany)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Germanium; Heterostructures; Molecular beam epitaxy; Silicon; Strain relaxation

Indexed keywords

DISLOCATIONS (CRYSTALS); MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; NUCLEATION; RAMAN SPECTROSCOPY; RELAXATION PROCESSES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH;

HETEROSTRUCTURES; STRAIN RELAXATION;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0031072535     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09327-3     Document Type: Article

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