Photoluminescence properties of GaN grown on compliant silicon-on-insulator substrates

Applied Physics Letters

Volumn 71, Issue 26, 1997, Pages 3880-3882

  Cao, J ^a   Pavlidis, D ^a   Eisenbach, A ^a   Philippe, A ^b   Bru Chevallier, C ^b   Guillot, G ^b  

^a University of Michigan   (United States)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000498695     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120532     Document Type: Article

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