SCOPUS 정보 검색 플랫폼

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 71, Issue 1-3, 2000, Pages 14-19

Relaxed SiGe buffer layer growth with point defect injection

(5) Lyutovich, K a Kasper, E a Ernst, F b Bauer, M a Oehme, M a

a UNIVERSITY OF STUTTGART (Germany)

b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ION BOMBARDMENT; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; STRAIN; STRESS RELAXATION;

HETEROEPITAXIAL GROWTH; SILICON GERMANIDE;

SEMICONDUCTING FILMS;

EID: 0033880287 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(99)00342-6 Document Type: Article

Times cited : (19)

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