Paramorphic growth: A new approach in mismatched heteroepitaxy to prepare fully relaxed materials

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 9 A/B, 1999, Pages

  Damlencourt, Jean François ^a   Leclercq, Jean Louis ^a   Gendry, Michel ^a   Garrigues, Michel ^a   Aberkane, Nabil ^a   Hollinger, Guy ^a  

^a ECOLE CENTRALE DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANELASTIC RELAXATION; CRYSTAL DEFECTS; ELASTICITY; ETCHING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRESS RELAXATION; SUBSTRATES;

MISMATCHED HETEROEPITAXY; PARAMORPHIC GROWTH;

SEMICONDUCTOR GROWTH;

EID: 0033343735     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l996     Document Type: Article

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