Characterization of low temperature grown Si layer for SiGe pseudo-substrates by positron annihilation spectroscopy

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 761-765

  Ueno, Tetsuji ^a,d   Irisawa, Toshifumi ^a   Shiraki, Yasuhiro ^a   Uedono, Akira ^b   Tanigawa, Shoichiro ^b   Suzuki, Ryoichi ^c   Ohdaira, Toshiyuki ^c   Mikado, Tomohisa ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

^d FUJITSU LABORATORIES LTD   (Japan)

Author keywords

A1. Crystallites; A1. Defects; A3. Molecular beam epitaxy; B2. Semiconducting silicon

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; POSITRON ANNIHILATION SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

PSEUDO-SUBSTRATES;

SEMICONDUCTING FILMS;

EID: 0035399218     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00822-3     Document Type: Conference Paper

References (11)