Si/SiGe n-MODFETs on thin SiGe virtual substrates prepared by means of He implantation

IEEE Electron Device Letters

Volumn 23, Issue 8, 2002, Pages 485-487

  Herzog, H J ^b   Hackbarth, T ^b   Seiler, U ^b   Konig U ^b   Luysberg, M ^c   Hollander B ^c   Mantl, Siegfried ^a,c  

^a IEEE

^b DAIMLER AG   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

He implantation; n MODFET; SiGe heterostructure; SiGe virtual substrate; Strained Si

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTRON MOBILITY; HELIUM; HETEROJUNCTIONS; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THERMOANALYSIS; THIN FILMS; TRANSCONDUCTANCE;

STRAIN RELAXING ANNEALING;

FIELD EFFECT TRANSISTORS;

EID: 0036687567     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.801336     Document Type: Article

References (14)

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