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Volumn 83, Issue 7, 1998, Pages 3829-3834

Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition

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Indexed keywords


EID: 0000428548     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366613     Document Type: Article
Times cited : (79)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.