Ion assisted MBE growth of SiGe nanostructures

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 104-108

  Bauer, M ^a   Oehme, M ^a   Lyutovich, K ^a   Kasper, E ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Ion assisted molecular beam epitaxy (IAMBE); Ion bombardment; Point defects; Relaxed SiGe buffer layers; Threading dislocations; Virtual substrate

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); ETCHING; FILM GROWTH; ION BOMBARDMENT; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ION ASSISTED MOLECULAR BEAM EPITAXY (IAMBE);

NANOSTRUCTURED MATERIALS;

EID: 0032316764     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01274-7     Document Type: Article

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