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Volumn 336, Issue 1-2, 1998, Pages 104-108
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Ion assisted MBE growth of SiGe nanostructures
a
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Author keywords
Ion assisted molecular beam epitaxy (IAMBE); Ion bombardment; Point defects; Relaxed SiGe buffer layers; Threading dislocations; Virtual substrate
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
DISLOCATIONS (CRYSTALS);
ETCHING;
FILM GROWTH;
ION BOMBARDMENT;
MOLECULAR BEAM EPITAXY;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR GROWTH;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
ION ASSISTED MOLECULAR BEAM EPITAXY (IAMBE);
NANOSTRUCTURED MATERIALS;
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EID: 0032316764
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(98)01274-7 Document Type: Article |
Times cited : (31)
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References (11)
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