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Applied Physics Letters

Volumn 70, Issue 13, 1997, Pages 1754-1756

Analysis of In0.07Ga0.93As layers on GaAs compliant substrates by double crystal x-ray diffraction

(4) Carter Coman, Carrie a Bicknell Tassius, Robert a,b,c Brown, April S a Jokerst, Nan Marie a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b GEORGIA TECH RESEARCH INSTITUTE (United States)

c CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CALCULATIONS; CRYSTAL DEFECTS; CRYSTAL GROWTH; LATTICE CONSTANTS; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN; THIN FILMS; X RAY CRYSTALLOGRAPHY;

BONDED SUBSTRATE REMOVAL PROCESS; COMPLIANT SUBSTRATES; DEOXIDATION; DOUBLE CRYSTAL X RAY DIFFRACTION; INDIUM GALLIUM ARSENIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031098358 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.118647 Document Type: Article

Times cited : (42)

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