14 nm gate length CMOSFETs utilizing low thermal budget process with poly-SiGe and Ni salicide

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 639-642

  Hokazono, A ^a   Ohuchi, K ^a   Takayanagi, M ^a   Watanabe, Y ^a   Magoshi, S ^a   Kato, Y ^a   Shimizu, T ^a   Mori, S ^a   Oguma, H ^a   Sasaki, T ^a   Yoshimura, H ^a   Miyano, K ^a   Yasutake, N ^a   Suto, H ^a   Adachi, K ^a   Fukui, H ^a   Watanabe, T ^a   Tamaoki, N ^a   Toyoshima, Y ^a   Ishiuchi, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ELECTRODES; GATES (TRANSISTOR); LEAKAGE CURRENTS; NICKEL COMPOUNDS; POLYSILICON; SILICON COMPOUNDS; THIN FILMS;

LOW THERMAL BUDGET PROCESSES;

MOSFET DEVICES;

EID: 0036928692     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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