Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 47-50

  Uchida, Ken ^a   Watanabe, Hiroshi ^a   Kinoshita, Atsuhiro ^a   Koga, Junji ^a   Numata, Toshinori ^a   Takagi, Shin Ichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRON MOBILITY; FABRICATION; HOLE MOBILITY; THRESHOLD VOLTAGE;

GATE-CHANNEL CAPACITANCE;

MOSFET DEVICES;

EID: 0036927506     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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2. Y. Choi et al., VLSI Symp. Tech., p19, 2001.
3. K. Uchida et al., IEDM Tech Dig., p633, 2001.
4. S. Takagi et al., IEDM Tech. Dig., p219, 1997.
5. H. Sakaki et al., Appl. Phys. Lett., 51, 1934, 1987.
6. A. Gold, Phys. Rev. B35, p.723, 1987.