Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 77, Issue 2, 2000, Pages 298-300

  Appenzeller, J ^a   Martel, R ^b   Solomon, P ^b   Chan, K ^b   Avouris, Ph ^b   Knoch, J ^c   Benedict, J ^d   Tanner, M ^e   Thomas, S ^e   Wang, K L ^e   Del Alamo, J A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c RWTH AACHEN UNIVERSITY   (Germany)

^d IBM   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000618801     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126956     Document Type: Article

References (16)

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