An experimental study of low field electron mobility in double-gate, ultra-thin SOI MOSFETs

Technical Digest-International Electron Devices Meeting

Volumn , Issue , 2001, Pages 445-448

  Esseni, D ^a   Mastrapasqua, M ^b   Fiegna, C ^c   Celler, G K ^d   Selmi, L ^a   Sangiorgi, E ^a  

^a UNIVERSITY OF UDINE   (Italy)

^b AGERE SYSTEMS   (United States)

^c UNIVERSITY OF FERRARA   (Italy)

^d SOITEC ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON MOBILITY; GATES (TRANSISTOR); SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; THICKNESS MEASUREMENT;

DOUBLE GATE MODE; INVERSION DENSITY; LOW FIELD ELECTRON MOBILITY;

MOSFET DEVICES;

EID: 0035718199     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979536     Document Type: Article

References (13)