Reduction of direct-tunneling gate leakage current in double-gate and ultra-thin body MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 99-102

  Chang, Leland ^a   Yang, Kevin J ^a   Yeo, Yee Chia ^a   Choi, Yang Kyu ^a   King, Tsu Jae ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIELECTRIC MATERIALS; EIGENVALUES AND EIGENFUNCTIONS; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); GROUND STATE; LEAKAGE CURRENTS; PERMITTIVITY;

ENERGY QUANTIZATION; GROUND STATE ENERGY; SCHRODINGER-POISSON SOLVER; TRANSVERSE RESONANCE METHOD;

MOSFET DEVICES;

EID: 0035714771     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)