A metal/insulator tunnel transistor with 16 nm channel length

Applied Physics Letters

Volumn 74, Issue 21, 1999, Pages 3215-3217

  Sasajima, Ryouta ^a   Fujimaru, Kouji ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042027083     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124109     Document Type: Article

References (7)

1. R. H. Dennard, F. H. Gaensslen, H. Yu, V. L. Rideout, E. Bassons, and A. R. Leblance, IEEE J. Solid-State Circuits SC-9, 256 (1974).
2. K. Fujimaru and H. Matsumura, Jpn. J. Appl. Phys., Part 1 35, 2090 (1996).
3. E. S. Snow, P. M. Campbell, R. W. Rendell, F. A. Buot, C. R. K. Maman, and R. Magno, Appl. Phys. Lett. 72, 3071 (1998).
4. K. Fujimaru, R. Sasajima, and H. Matsumura, 56th Annual Device Research Conference Digest (The IEEE Electron Devices Society, Charlottesville, Virginia, 1998), p. 44.
5. K. Fujimaru, R. Sasajima, and H. Matsumura, J. Appl. Phys. 85, 6912 (1999).
6. K. Fujimaru, T. Ono, R. Nagai, and H. Matsumura, Jpn. J. Appl. Phys., Part 1 36, 7786 (1997).
7. M. Koehler and I. A. Hümmelgen, Appl. Phys. Lett. 70, 3254 (1997).