Effects of the inversion-layer centroid on the performance of double-gate MOSFET's

IEEE Transactions on Electron Devices

Volumn 47, Issue 1, 2000, Pages 141-146

  Lopez Villanueva, Juan A ^a   Cartujo Cassinello, Pedro ^a   Gamiz, Francisco ^a   Banqueri, Jesus ^a   Palma, Alberto J ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; GATES (TRANSISTOR); INVERSE PROBLEMS; SEMICONDUCTING SILICON; THIN FILMS;

CARRIER DISTRIBUTION; INVERSION LAYERS; VOLUME INVERSION TRANSITIONS;

MOSFET DEVICES;

EID: 0033899910     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.817579     Document Type: Article

References (28)