QDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometries

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 715-718

  Laux, S E ^a   Kumar, A ^a   Fischetti, M V ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BOUNDARY CONDITIONS; CARRIER CONCENTRATION; COMPUTER SIMULATION; GREEN'S FUNCTION; POISSON EQUATION; POTENTIAL ENERGY; PROBLEM SOLVING; SILICON;

SCATTERING STATES;

FIELD EFFECT TRANSISTORS;

EID: 0036923795     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. S. E. Laux, A. Kumar, and M. V. Fischetti, "Ballistic FET modeling using QDAME: Quantum Device Analysis using Modal Evaluation," IEEE Trans. Nanotechnology, 2002. To appear.
2. D. Jovanovic, B. Liu, R. Strumpf, K. Beardmore, R. Venugopa, M. Lundstrom, and S. Datta, "Non-equilibrium Green's functions for MOSFET modeling," in Proc., Workshop on Quantum Transport in Semiconductors, 2001. Conference CDROM.
3. A. Svizhenko, M. P. Anantram, T. R. Govindan, B. Biegel, and R. Venugopal. "Two-dimensional quantum mechanical modeling of nanotransistors," J. Appl. Phys., vol. 91, no. 4, pp. 2343-2354, 2002.
4. S. E. Laux, A. Kumar, and M. V. Fischetti. To be published.
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