Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 90, Issue 2, 2001, Pages 866-870

  Iwata, Hideyuki ^a  

^a TOYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035878967     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1378329     Document Type: Article

References (13)

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