Tunnelling-based SRAM

Nanotechnology

Volumn 10, Issue 2, 1999, Pages 174-186

  Van Der Wagt, J P A ^a,b  

^a RAYTHEON COMPANY   (United States)

^b ROCKWELL SCIENCE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC LOSSES; ELECTRIC NETWORK TOPOLOGY; ELECTRIC POWER SUPPLIES TO APPARATUS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; STANDBY POWER SYSTEMS;

TUNNELLING-BASED STATIC RANDOM ACCESS MEMORY (TSRAM);

RANDOM ACCESS STORAGE;

EID: 0032635955     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/10/2/312     Document Type: Article

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