Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes

Applied Physics Letters

Volumn 73, Issue 15, 1998, Pages 2191-2193

  Rommel, Sean L ^a   Dillon, Thomas E ^a   Dashiell, M W ^a   Feng, H ^a   Kolodzey, J ^a   Berger, Paul R ^a   Thompson, Phillip E ^b   Hobart, Karl D ^b   Lake, Roger ^c   Seabaugh, Alan C ^c   Klimeck, Gerhard ^c   Blanks, Daniel K ^c  

^a UNIVERSITY OF DELAWARE   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000284042     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122419     Document Type: Article

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