Room Temperature Negative Differential Conductance in Three-Terminal Silicon Surface Tunneling Device

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 265-268

  Koga, Junji ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRON TUNNELING; CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE; LEAKAGE CURRENTS; NEGATIVE RESISTANCE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS;

BAND-TO-BAND TUNNELLING; FIELD OXIDES; IMPURITY PROFILE; NEGATIVE DIFFERENTIAL CONDUCTANCE; NEW DEVICES; SI SURFACES; SILICON SURFACES; SIMOX WAFERS; TUNNELING CURRENT; TUNNELING DEVICE;

SILICON WAFERS; MOSFET DEVICES;

NEGATIVE DIFFERENTIAL CONDUCTANCE; SILICON SURFACE TUNNELING DEVICE;

EID: 0030409587     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553581     Document Type: Conference Paper

References (5)

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5. T. Uemura and T. Baba, Jpn. J. Appi. Phys. 33, L207 (1994).