Proposal of low-noise amplifier utilizing resonant tunneling transistors

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 31-35

  Ando, Yuji ^a   Cappy, Alain ^a  

^a NEC CORPORATION   (Japan)

Author keywords

, RTD; Low noise amplifier; RTT

Indexed keywords

AMPLIFIERS (ELECTRONIC); CIRCUIT RESONANCE; COMPUTER SIMULATION; ELECTRON TUNNELING; NEGATIVE RESISTANCE; OPTIMIZATION; RESONANT CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TUNNEL DIODES;

LOW NOISE AMPLIFIERS; RESONANT TUNNELING DIODES (RTD); RESONANT TUNNELING TRANSISTORS (RTT);

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0031646542     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658808     Document Type: Article

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