RTD/HFET low standby power SRAM gain cell

IEEE Electron Device Letters

Volumn 19, Issue 1, 1998, Pages 7-9

  Van Der Wagt, J P A ^a   Seabaugh, A C ^a   Beam III, E A ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; FIELD EFFECT TRANSISTORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; TUNNEL DIODES;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; PEAK TO VALLEY CURRENT RATIO; ULTRALOW CURRENT DENSITY RESONANT TUNNELING DIODE;

RANDOM ACCESS STORAGE;

EID: 0031701561     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.650335     Document Type: Article

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