Microwave noise properties for resonant tunneling transistors (RTTs)

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 609-612

  Ando, Y ^a   Contrata, W ^a   Maruhashi, K ^a   Miyamoto, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; HETEROJUNCTIONS; JUNCTION GATE FIELD EFFECT TRANSISTORS; LOW NOISE AMPLIFIERS; RESONANT TUNNELING; SHOT NOISE; TEMPERATURE MEASURING INSTRUMENTS; TRANSISTORS;

HETEROJUNCTION FET; MICROWAVE NOISE; NOISE GENERATION; NOISE PERFORMANCE; RESONANCE PEAK; RESONANT TUNNELING TRANSISTORS; SERIES RESISTANCES; VALLEY CURRENT;

RESONANT TUNNELING DIODES;

EID: 33747028644     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711751     Document Type: Conference Paper

References (6)

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5. Tehran! S, et al. 1995 IEEE Electron Device Lett. 16 557-559
6. Ando Y and Cappy A to be published in IEEE Trans. Electron Devices