Multibit resonant tunneling diode SRAM Cell Based on Slew-Rate Addressing

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 55-62

  Van Paul Der Wagt, J ^a   Tang, Hao ^b   Broekaert, Tom P E ^c   Seabaugh, Alan C ^d   Kao, Yung Chung ^e,f  

^a RAYTHEON COMPANY   (United States)

^b ROCKWELL SCIENCE CENTER   (United States)

^c UNIVERSITY OF MARYLAND   (United States)

^d Prominent Communications Incorporated   (United States)

^e TEXAS INSTRUMENTS   (United States)

^f Intelligent Epitaxy Technology Inc   (United States)

Author keywords

Bistable circuits; Hysteresis nonlinearity; Integrated circuit interconnections; Memories; Multivalued logic circuits; Random access memories; Resonant tunneling devices; SPICE; Tunnel devices effects

Indexed keywords

COMPUTABILITY AND DECIDABILITY; COMPUTATIONAL COMPLEXITY; COMPUTER SOFTWARE; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ELECTRIC SWITCHES; HYSTERESIS; INTERCONNECTION NETWORKS; LOGIC CIRCUITS; MANY VALUED LOGICS; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICE MODELS;

MULTIBIT RESONANT TUNNELING DIODES (RTD); SOFTWARE PACKAGE SPICE;

TUNNEL DIODES;

EID: 0032715127     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737441     Document Type: Article

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