Negative differential conductance at room temperature in three-terminal silicon surface junction tunneling device

Applied Physics Letters

Volumn 70, Issue 16, 1997, Pages 2138-2140

  Koga, Junji ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1842464239     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118970     Document Type: Article

References (5)

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3. L. Esaki, Phys. Rev. 109, 603 (1958).
4. J. Chen, R. Solomon, T.-Y. Chan, P. K. Ko, and C. Hu, IEEE Electron Device Lett. 12, 453 (1991).
5. T. Uemura and T. Baba, Jpn. J. Appl. Phys. 33, L207 (1994).