Single-electron-memory integrated circuit for giga-to-tera bit storage

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 39, Issue , 1996, Pages 266-267

  Yano, K ^a   Ishii, T ^a   Sano, T ^a   Mine, T ^a   Murai, F ^a   Seki, K ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CELLULAR ARRAYS; ELECTRON DEVICES; ELECTRONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; THIN FILM TRANSISTORS; ULTRATHIN FILMS;

COULOMB BLOCKADE EFFECT; FLASH MEMORY; GATE OXIDE THICKNESS; MEMORY CELL ARRAY; POLYSILICON FILM; SENSE AMPLIFIERS; SINGLE ELECTRON MEMORY;

INTEGRATED CIRCUITS;

EID: 0030084435     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)