High Density Nonvolatile Magnetoresistive RAM

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 193-196

  Tehrani, S ^a   Chen, E ^a   Durlam, M ^a   Zhu, T ^a   Goronkin, H ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RANDOM ACCESS STORAGE; CELLULAR ARRAYS; INTEGRATED CIRCUITS; MAGNETIC HYSTERESIS; MAGNETIC MOMENTS; MAGNETIC THIN FILMS; MAGNETORESISTANCE; NONVOLATILE STORAGE; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY;

BIPOLAR SIGNAL; DEEP SUB-MICRON; DEEP SUBMICRONS; NONVOLATILE; SUBMICRON FEATURE SIZE; SWITCHING CHARACTERISTICS;

SEMICONDUCTOR STORAGE; RANDOM ACCESS STORAGE;

DEEP SUBMICRON; GIANT MAGNETORESISTANCE; HIGH DENSITY MEMORY; MAGNETORESISTIVE RANDOM ACCESS MEMORY; MEMORY CELL;

EID: 0030383566     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553152     Document Type: Conference Paper

References (6)

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4. Z.H. Wang and Y. Nakamura, " Design, simulation.and realization of solid state memory element using the weakly coupled GMR effect,;' IEEE Trans. on Magn. Vol. 32, No. 2, 1996.
5. A. V. Pohm, R. S. Beech, J. M. Daughton, B. A. Everitt, E. Y. Chen, M. Durlam, K. Nordquist, T. Zhu, and S. Tehrani,"Experimental and analytical properties of 0.2 micron wide, multilayer memory elements, ZEEE Trans. on Magn., Nov. 1996.
6. E. Y. Chen, S. Tehrani, X. Zhu, M. Durlam and H. Goronkin, "Submicron spin valve MRAM cell," presented at MMM conference, to be published in J. Appl. Phys., April 1997.